Compiling the previous mobile information into a table with the TDP:
Broadway HD5870M 45-60W
Broadway HD5850M 30-40W
Broadway HD5830M 29W
Madison HD5750M 20-30W
Madison HD5730M 20-25W
Madison HD5650M 15-20W
Park HD5470M 12-15W
Park HD5450M 10-12W
Park HD5450M < 8W
Now trying to compare to the current M9x TDP Figures(From
here and
here - obviously take from a german site i cant find):
RV770 HD4870M 47-55W
RV740 Hd4860M ~44W ??
RV770 HD4850M 40-48W
RV740 HD4830M ~30W ??
RV730 HD4670M 28-30W
RV730 HD4650M 12-25W
RV710 HD4570M 12-15W
RV710 HD4530M 8-12W
RV710 HD4330M 7W
Hopefully can see in the above roughly Broadway is set to replace RV740 and RV770, Madison the RV730 and Park the RV710. They are stated as pin compatible so that implies Park is a 64bit part. Looks like AMD is trying to make these drop in replacements so wont need to go through as full ordeal verfication to get them in current designs.
Now when TSMC announced 40nm G they stated: The 40G process is claimed to be up to 30 percent faster than TSMC’s 65nm GP process at the same leakage, or up to 70 percent lower leakage at the same speed.
As the power figures are roughly equal it looks as if AMD has taken nearly all the 40nm gains in terms of increased performance. If the improvement they got was really 35%-45% than current parts, then say roughly 20% is due to the shrink(as comparing 40nm to 55nm not 65nm) and at least 15-25% is due to design improvements and or/more units.
As it sounds like alot of gain, i think some of that 15-25% could also be due in part to better memory ie low voltage DDR3 or GDDR5
Finally particularly note the 3 40nm 128bit chips: RV740M, Madison and Broadway. Madison is clearly below the RV740 and Broadway just above the RV740 in performance.
