xbdestroya said:
@aaronspink: Way I was reaching the numbers (similar to how Jaws was doing it I'm sure) was by calculating the increased percentage of transistor density on a process shrink.
1 - ([newer process]^2/[older process]^2) = % gain
I can't address what deviations one process shrink might have against another though; as far as I'm aware the equation traditionally holds up.
Past performance is no indication of future gains. For a variety of reasons, most vendors aren't reducing metal sizes as much as they used to. Most of the density improvements are coming from addition additional metal layers and even this is somewhat offset by the need for better power and clock distrobution as voltages decrease and frequencies increase.
In addition, as has been pointed out, this also involves a process vendor transition from IBM which has historically had the most aggresive metal stacks in both number of layers as well as in actual sizing and spacing to TSMC who aren't exactly considered as being aggressive. Cheap, low cost, volume, but not pushing the boundries is the key to TSMC's success.
So if wouldn't supprise me if the metal density has increased minimally (possibly stayed the same) from the 130 nM IBM process to the 110 nM TSMC process.
Aaron Spink
speaking for myself inc.