There is possibility 2xrv670 based card GPU's is in the same die package?
This is just my take, but I don't think economies of scale would apply to such a configuration, so it's pretty unlikely.
There is possibility 2xrv670 based card GPU's is in the same die package?
Apples and oranges, I think. Neither of those two dice were designed to be used without the other. A package with two rv670 dice is one that cannot be used as a "midrange" part, whereas a single-die package can be used alone or in a pair.Why unlikely when it works well for Xenos and eDRAM?
Die size isn't the determining factor for leakage.Also add in that silicon, at this point in the foundry game, really needs significant "doping" in order to be anything worthwhile, and to prevent leakage...it really seems fool-hardy to increase the size of a die. Silicon dies need to be smaller, in order to deal with leakage properly, but the market needs more functionality.
Leakage isn't a contagious disease.It IS a consideration if active parts leak over into other active parts, and seperating these parts prevents this behavior, as well as allows for higher scaling in frequency.
And?You are far too used to considering a gpu as a whole, rather than it's seperate processing units. In my mind, although these units are connected, they are not the same, nor will they behave the same when under load...thermal characteristics are not the same over the entire die, unfortunately.
No, an idle area next to an active one tends to cool it.you end up with hotspots in highly active areas, especially when the element next to them is sitting idle..
That's simply not done.Like leakage from cache overheats the ROPS, so half must be disabled...
Because the chips will be stuck under the same cooling assembly. As such, that cooler will be no more efficient than a cooler on a larger chip, or you have a bunch of smaller coolers that are less capable than the large one.Heat is a major factor, IMHO, so while you bring up valid points, except cost, they all don't mitigate the problem at hand.
And yes, it was heat spread from other parts that I refer to...hence my mention of highly active parts hurting others...the only factor is heat from the leakage. I thereby fail to understand your points, in this regard.
Or just the bottom line of the currently unprofitable company.Cooling...well, so what? More expensive? So? I can think of many places where the excess cost is recouped. Overpaid execs would be the first to come to mind...
Nevermind the price/performance considerations, as this is not a monoply market, and profits tend to be a bit higher for board partners siding with another camp...again, matching prices a bit closer can reap huge benefits overall.
Because the chips will be stuck under the same cooling assembly. As such, that cooler will be no more efficient than a cooler on a larger chip, or you have a bunch of smaller coolers that are less capable than the large one.
Leakage is not a reason to go multichip. You just get multiple leaky chips.
If multichip saved on power, those POWER 5 MCMs wouldn't be burning almost a kilowatt.
You claim that going multichip will prevent leakage problems.I dunno about you, but all i see out there are some highly in-efficient coolers placed on stock cards, and if this wasn't so, there wouldn't be the market of after-market cooling that there is. I don't understand your line of thought here...at all. I've got a few ideas bouncing around in my head, and if the paid engineers can't come up with better solutions, there there needs to be some better engineers. This is a business we are talking about, one run by some execs who claim to be "innovative", and "customer-centric".
I never said leakage was the main reason. In fact, you then go on to quote me, and say, "this is the real reason". Welcome to the party, drinks are at the back.
Also add in that silicon, at this point in the foundry game, really needs significant "doping" in order to be anything worthwhile, and to prevent leakage...it really seems fool-hardy to increase the size of a die. Silicon dies need to be smaller, in order to deal with leakage properly, but the market needs more functionality.
If it weren't for doping, photolithography and semiconductors would be pointless.LoL. Maybe if process quality at specific nodes was much better, and doping wasn't needed, then the excessive voltages you see used now, which truly create this leakage, could be lowered enough to pull power requirements in-line with what was expected a few years ago, which has now been all but forgotten. Problems with being fabless, i suppose. Maybe access to fabs can pull some wonders out of the ATI arm of AMD.
You claim that going multichip will prevent leakage problems.
I've stated that no, it would not. The transistors would still leak, and they would still have to pass heat through a common cooling assembly.
The solution for leakage is not to use more efficient coolers.
The chips are still leaky, regardless of the cooler they're housed under.
If it weren't for doping, photolithography and semiconductors would be pointless.
Within the confines of a PCB and board spec, the effectiveness of the separate coolers individually is not as great as a single large cooler.Nothing common is "prescribed" for cooling seperate elements on the same pcb. If you cannot get this through your head, then...well, there's no point in even discussing this with you. For example, it would be more than simple enough to put two seperate coolers within a single shroud, with that shroud seperating the cooling elements. Heatpipes ensure this is possible.
There is a balance that must be struck, as there have been occassional cases where the direct opposite is true.Yes, but it's far harder to cool a larger die than it is a smaller die.
Um, hold on a minute here...do you know what doping is? Not that i question your knowledge, but we could quite possibly be talking about different things...and by your responses, we are.
Silicon is a semi-conductor. this means that under certain conditions, it's a conductor, under others it's an insulator. Leakage is a result of this, as silicon has a specific frequency of "juice" it can handle while still remaining an insulator.
Voltage, at a given frequency, will "leak" when it comes close to pushing the semi-conducting properties of silicon(getting close to making it a conductor). Change the frequency of the current, and it leaks less.
Most of the time reducing voltage reduces leakage.Changing voltage can change current, and thereby negate leakage.
If that is not the doping you are talking about, I am curious which definition you are using.
Yes, dopants are used to change the energy required to liberate charge carriers in the material.Using wiki terms, doping is used to change the band structure of the device.
Those bands are measures of the necessary amount of energy needed to reach certain states.Those "bands" are frequency bands, FYI. Voltage differential, and it's set frequency, are physical properties of the semi-conducting "bands" of crystals. All leakage is either due to this, or an improperly aligned lattice.
Then they should just stop using transistors.All these mentioned things are what is currently holding back the industry. IMHO doping is a signifigant factor in yields, and IMHO more due to fabs and thier engineers being too accustomed with doped materials, and a lack of refinement within doping levels.
Blame physics, corporate policy, economic factors, and the limits of consumer cooling technology.I'm still awaiting a 4ghz cpu in the consumer space. Many years now, and nothing. Why?
Just so you know, those multi-chip GPUs they make will be using doped silicon.Anyway, because of the current problems, and the huge obstacles faced in either direction, AMD's faced with a decision. One they've already made, BTW.
Transistor leakage is due to band gaps in the same way that car crashes are due to car engines.
Without the source of leakage you want to get rid of, the thing doesn't work.