Are you saying that prescott has 90 nm for its physical gate length ? ( prescott is Intel's first 90 nm chip and IIRC Intel said that the gate length for it was quite less than 90 nm ).
No, silly I wanted to say normally when you said say 90nm process, your gate length are also inlined with the guidelines. Well if not, your chip won't be very high in performance.
Since we always associated process with performance, gate length is important also.
You are saying that for Toshiba and Sony when they say 90 nm, 65 nm and 45 nm they mean Metal Pitch, but this seems the case with Intel too judging Prescott.
These are only SIA guidelines, companies are free to say what they want. Everyone seems to be having problem with 90nm process, its no suprise they look elsewhere for guidelines.
I mean they can say what they like about their process, in the end its the benchmark that does the talking.
Eitherway, I don't like the idea that companies stray too much from the guidelines. It means more questions more uncertainty when predicting things.
As for investors, I think Sony should be honest, if they're having problem with their 90nm process.
I do not understand how supposely the world's smallest ( uncontested ) e-DRAM using 65 nm technology is quite bigger than what you have for the 100 nm node.
First its eDRAM there is some penalty to it.
Also the ITRS assume certain conditions like the 90nm process, SIA assume or expects 37nm gate length for example. So if it meets the ITRS conditions it should give closer to the value they're predicting.
And ITRS still has 65nm node for 2007. So maybe when their 65nm node matured in 2007, it'll get smaller yet.