18.1 Implementation of the CELL Broadband Engineâ„¢ in a 65nm SOI Technology
Featuring Dual-Supply SRAM Arrays Supporting 6GHz at 1.3V
1:30 PM
J. Pille1, C. Adams2, T. Christensen2, S. Cottier3, S. Ehrenreich1, F. Kono4, D. Nelson2,
O. Takahashi3, S. Tokito5, O. Torreiter1, O. Wagner1, D. Wendel1
1IBM, Boeblingen, Germany
2IBM, Rochester, MN
3IBM, Austin, TX
4Toshiba American Electronic Components, Austin, TX
5Sony Computer Entertainment, Austin, TX
The 65nm CELL Broadband Engineâ„¢ design features a dual power supply, which
enhances SRAM stability and performance using an elevated array-specific power
supply, while reducing the logic power consumption. Hardware measurements
demonstrate low-voltage operation and reduced scatter of the minimum operating
voltage. The chip operates at 6GHz at 1.3V and is fabricated in a 65nm CMOS SOI
technology.