NEC Electronics Embeds MoSys' 1T-SRAM Memory Technology in 90nm Custom ASIC; Companies Extend Agreement To Use 1T-SRAM In Upcoming Consumer Applications
SUNNYVALE, Calif.--(BUSINESS WIRE)--March 24, 2005--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions announced today the renewal of the existing partnership with NEC Electronics to incorporate MoSys' 1T-SRAM(R) technologies into high volume semiconductor devices for consumer applications manufactured on NEC Electronics' 90nm process generation.
"Since the commencement of our original licensing agreement in March 1999, NEC Electronics has successfully deployed MoSys' 1T-SRAM because of its unique combination of performance, density and power capabilities not available from any other competing memory technologies," said Tom Nukiyama, senior technical director at NEC Electronics America. "We now look to extend our relationship with MoSys to jointly offer our ASIC customers requiring large quantities of high-performance embedded memory a compelling solution to enhance their consumer electronics SoC designs. The manufacturability of 1T-SRAM memory makes it the ideal technology for reducing costs and increasing quality, which is why, at the end of the day, we see it as the ultimate drop-in memory solution."
"We are pleased that NEC Electronics will continue to use our 1T-SRAM embedded memory technologies on even more aggressive processes," said Karen Lamar, vice president of Sales and Marketing at MoSys, Inc. "This combination of our unique memory architecture and NEC Electronics' most advanced semiconductor fabrication technology provides SoC designers with tremendous capability for their next generation of highly-integrated products."
IGN: May 10, 2005 - Memory maker MoSys Inc. today announced its first quarter 2005 earnings. In a live conference call with investors and media the company's CEO and chief financial officer Mark Voll stated that MoSys would once again be supplying an embedded 1T-SRAM solution for Nintendo's forthcoming console, codenamed Revolution. He also revealed for the first time a general target ship date for the still top-secret next-generation platform.
"During the quarter we announced that NEC Electronics will now use our 1T-SRAM embedded memory technologies on their advanced 90nm process, and that the initial designs to be incorporated in SoCs will be used in Nintendo's next-generation game console, codenamed Revolution," said Voll. "We are excited to be a participating member of the Nintendo team once again as Nintendo will roll out its successor game console to the GameCube in mid-2006."
The news is exciting for two reasons: first, it's official word that Revolution will again use 1T-SRAM, the same memory standard that GameCube utilized with great results. 1T-SRAM provides significant advantages over traditional SRAM in density, power consumption and cost, according to maker MoSys. "Instead of six transistors utilized in a traditional SRAM storage cell, each 1T-SRAM storage cell contains only one transistor and one capacitor, thus reducing the silicon required and lowering cost. This technology has been proven with the shipment of millions of devices," MoSys writes on the subject.
MoSys did not reveal
how much memory it would provide for Revolution
