I have been wondering for awhile now what is the differance between 4T-SRAM and 6T-SRAM memory maybe one of you guys could please tell me thanks for your time 8) .
Their differences are not about bandwidth. To my understanding, generally 6T-SRAM designs are faster in clocks and tend to have better electrical characteristics. However, it has larger cell size than 4T-SRAM.
4T-SRAM uses 4 transistors and 2 load resistors per SRAM cell. 6T-SRAM uses 6 transistors and no resistors. This gives rise to two major differences:
4T-SRAM cell size is much smaller
4T-SRAM burns a lot of power per cell even when standing idle. This often makes 4T-SRAM practically unusable in actual chip designs.
For some figures that show the difference between 4T-SRAM and 6T-SRAM at the circuit diagram/cell layout level, take a look at page 2 of this PDF. As for clock speed, I would expect 6T-SRAM to be a bit faster due to the PMOS load transistors being able to drive the bitlines better than the load resistors of 4T-SRAM.
