It isn't.
The eDRAM on the WiiU GPU is too dense.
If it had been done on IBMs 45nmSOI it would have been significantly larger. Renesas 40nm eDRAM cells are roughly the same density (cell sizes: Renesas 0.06um2, IBM 0.067, TSMC 0.0583).
Cell size numbers are usually from the first public presentation, and actual production silicon is a of course a better indicator of true density. Time does allow refinement, and tailoring to a specific application can also yield benefits (TSMC has a denser variety of eDRAM suitable for mobile applications and lower clocks, for instance). In fact, such refinement/customization is necessary in order to achieve the density of the WiiU GPU eDRAM at 40nm. I know of no example of eDRAM at 55nm, anywhere, at any speed, that could allow the eDRAM density of the WiiU.
So, even assuming 40nm, the eDRAM density is really very high. If we can generalize from this and assume that they have been able to achieve good density in other areas is, of course, an open question. Doesn't seem implausible though.