This is starting to bother me. In a world where Xenos was first to 90nm (okay, so R520's problems had a bit to do with that, but still) in the summer of 2005 (when they began shipping them to MS in volume), here we are two years later and it's *still* 90nm. Why? The quite sizable advantages to a shrink to 65nm seem too evident to even bear much discussion. Is "yields at the 65nm node" the answer? I can't see it, personally. . . or you'd have to make an argument for why "yields" are less important for the already-shipping 65nm RV6 line than it would be for Xenos. This strikes me as a pretty difficult case to make.
So I keep coming back to the interface with the edram daughter die as being the likely sand in the gears on a shrink. Is it possible to marry a 65nm Xenos die with a 90nm edram die? Would it require significant re-engineering/verification of the interface between them such that you might rather wait for 65nm edram instead? The fact that TSMC is now reported to be doing the daughter die now at 90nm have anything to do with the delay in getting Xenos moved to 65nm?
So I keep coming back to the interface with the edram daughter die as being the likely sand in the gears on a shrink. Is it possible to marry a 65nm Xenos die with a 90nm edram die? Would it require significant re-engineering/verification of the interface between them such that you might rather wait for 65nm edram instead? The fact that TSMC is now reported to be doing the daughter die now at 90nm have anything to do with the delay in getting Xenos moved to 65nm?