Whatever happened to the original thread. No, don't answer. Anyway here are Chipworks' opinions.
http://www.chipworks.com/news/11SonyPSX.htm
http://www.chipworks.com/news/11SonyPSX.htm
Ah, but most of us know this already, and you are correct that most of us do not care. However the sticking point for several of us is not whether it runs faster or better, but whether it was a blatant lie to customers and investors. (Admittedly most customers won't care actually)Guden Oden said:Why does anyone even care?
A chip is a chip is a chip, and it won't run any faster or better no matter what process it uses if all other factors are the same.
Deadmeat said:
Look at the power consumption rating of 90 nm PPC970FX; 60 watts each at 2.4 Ghz. Throw in Intel's long-running trouble with 90 nm Prescott and the outlook of whole future sub-90 nm process generations doesn't look so good.
CELL was built on the promise that the transition to sub-90 nm generation would be smooth and easy way back in 2001.
Deadmeat said:CELL was built on the promise that the transition to sub-90 nm generation would be smooth and easy way back in 2001. Now this prediction turned out to be wrong and the whole chip fabricating industry is struggling to make 90-nm process work correctly and yield acceptably. Should the transition to 65 nm process falter, SCEI is hit directly since CELL depends on the availability of 65 nm process.
Unlike low-clocking PSX2OAC and PSP, Cell will be pushed to its design limit and run into very trouble that has dogged Intel and IBM for past year. Can SCEI beat these challenges? Only time will tell.
Optimism surfaces on the road to 65 nm
By Ron Wilson
EE Times
February 05, 2004 (11:00 AM EST)
SANTA CLARA, Calif. — Engineering managers from the equipment, foundry, IDM and EDA remain optimistic about the prospects for eventual production at the 65-nm process node — a markedly different assessment from the view many held of 90 nm at this stage of its development.
Greg Spirakis, Intel Corp.'s vice president and director of design technology, cited growing density, growing challenges but an unshakable belief in the efficacy of Moore's Law. Still, Spirakis acknowledged the cost of continued progress was getting higher.
Ashok Sinha, senior vice president of the Silicon Business Sector at Applied Materials, endorsed Spirakis' view. "The barriers to Moore's Law are economic, not technical," he said. On the technical side, Sinha suggested that the move from 90 nm to 65 nm would be less disruptive than the move from 130 to 90 has been. "Between 90 and 65, the changes are driven by power issues," he said, adding that the differences would be the introduction of high-K materials for gate dielectrics and of strained silicon for the channel.
"These are still major changes," Sinha said. "They bring with them cost risks, cycle-time risks and the risks that always come with integration of new materials into a working process."
John Yue, vice president of technology at TSMC North America, struck an even more optimistic note. "A few years ago, 65 nm looked daunting," he said. "Today, it looks very doable. The issues we have to solve are still leakage and signal integrity: the same as we are facing today with 90 nm, just harder."
Yue agreed that high-K dielectrics and metal gates could be "an option" for 65-nm production.
Charles Rothschild, R&D manager of the Automated Test Group at Agilent Technologies, was more cautious. "A new technology stands on three legs," Rothschild said, "Silicon technology, integration technology and an application that can use the advances in volume. When these three converge, we get a huge spike in semiconductor demand."
Rothschild said technology and integration — that is, packaging and assembly — issues were in hand, but a "killer application" has yet to emerge. "Historically, manufacturers are only willing to pay a fixed fraction of total manufacturing cost on test. But test doesn't scale with Moore's Law. We are doing everything we can to keep test cost from busting the budget."
Rothschild described how test engineers have been implementing multisite testing, pushing BiST to the limits, and building concurrency and high-bandwidth test-mode I/O on top of BiST to try to force test times down.
Antun Domic, senior vice president and general manager at the Synopsys Nanometer Analysis and Test division, warned: "The scariest thing to me is the sheer amount of data we are generating with these designs." He cited explosions in RTL code size — with 1 million lines of RTL not unreasonable for a moderate-sized 65-nm chip — and the inextricable intertwining of verification data and design-for-yield data into the design data set.
Bhusan Gupta, director of the Innovative Systems Design Lab at ST Microelectronics, agreed that design reuse and higher levels of abstraction must be employed to reduce design complexity. He also e warned that the leakage problem was far from simple.
"The leakage current on one of these chips is so temperature-dependent that it can change by a factor of 15 between a cold chip at start-up and a chip at operating temperature. You have to deal with that wide a range in the design flow, not as an afterthought," Gupta said.
Guden Oden said:Why should anyone here care wether it's a blatant lie or not?
GODS!
This is a typical 'b*tch and moan' type of topic to which f*nboys of all colors tend to home in on. It's not productive.
Guden Oden said:So this is IMO a BS topic that will lead nowhere.
We won't know until the 65 nm test fab begins, won't we? Current leakage problem gets worse, not better, as the geometry shrinks, and not even SOI can do much about it. In the mean time, let 100 watt 90 nm processors roll in..So the industry consensus seems to be that 130->90 is much harder that 90->65 will be.
Then what happens when SCEI tries to fabricate an all 90 nm node device like PSP ASIC? Massive current leakage? Low yield? What will happen when the first CELL@90 nm prototype is demonstrated this spring?This directly ties in to cthellis' excellent post on why even though Sony/Toshiba has 90nm technology, they chose to use it only when it would cut cost, because the EE+GS chip does not require higher performance.
It is an invester issue, not a product issue. Sony promised that its fab was the best and most advanced in the industry, it turned out to be not true.What are you buying a PSX for, because it's got an EE+GS chip made with .09u tech? Jesus, no!
Because it is the same technology to manufacture CELL and PSP.Why would you even care what tech is used to manufacture the chip?
If I were the president of Sony, I would not have claimed that PSX2OAC was a 90 nm product. For all purpose and intentions, it does not even deliver the benefits of a true 90 nm process
Deadmeat said:Because it is the same technology to manufacture CELL and PSP.
Deadmeat said:It is an invester issue, not a product issue. Sony promised that its fab was the best and most advanced in the industry, it turned out to be not true.
[url=http://www.chipworks.com/news/11SonyPSX.htm said:Chipworks[/url]]In addition the Sony device uses an advanced two stack low-k dielectric structure. The combination of this dielectric process and the smallest transistor seen so far by Chipworks makes this one of the most advanced processes in volume production today.
jvd said:I disagree.
I find the only one whining is you .
What matters is they lied .
That is what you don't seem to get .
And the truth is whats important .
Guden Oden said:And Geeforcer:
Grow UP, will you?