Umm, what are metal spins?
A metal spin is a chip revision where only metal layers of a chip are changed and the base layer stays constant. Basically, you don't add any new transistors on the die, you just reconnect a few of them differently. To make this possible, a new chip has always a whole bunch of so called spare gates: unused logic elements that are sprinkled all across the chip that can be used when new logic elements are required for bug fixing.
Most chips require metal spins before going in production (RV770 is a notable exception). Base spins are rare.
Since metal spins don't materially change the silicon (transistors stay the same), they usually don't result in significant changes wrt speed and power. (Except for crosstalk fixes.)
Metal spins are usually indicated by an increment in the minor version number.
E.g. going from A11 to A12 indicates a metal spin. Going from A11 to A21 could suggest a base spin. Going from Axx to Bxx could indicate going to a different process or a different fab. But each company has its own conventions.
Could it be lowering the core voltage i.e lowering the overall power consumption?
If you want to lower the core voltage, all you have to do is lower the core voltage.
That is: you tune the external power supply. No need to change anything on the silicon.
I always thought that some of the main reasons of re-spins were to reduce power consumption/improve clock speeds (fixing bugs as well).
For metal spins, the prime objective is almost always bug fixing. There is very little you can do once you've nailed down your design and selected the process.
You can ask the fab to tweak process parameters a little bit to shift the silicon into a certain direction, but that also increases the chance that the characteristics of the resulting silicon will fall outside the desired range (and thus impact yield.)
Isnt this the case with GT206/GT200B and its 3 re-spins hence the B3 revision?
It depends on the company conventions. Does the B in B3 mean that there were two base spins of the 55nm version or does the B in B3 mean it's the 55nm version with A being the 65nm version?
It's obvious that a 55nm version will have different speed and power characteristics, but that's generally not called a spin. The proper name is a shrink. A spin generally has a negative connotation because it means that bugs had to be fixed. A shrink is usually a cost optimization (that may require spins to get it right.) For those cases where a shrink is 100% logically equivalent to its original design, the prime reason to spin a shrink is to fix analog problems (ESD, IO pads, PLLs not behaving like they should.)
Yes, that's what I know as well. You decrease voltage and the power consumtion goes down. However, this cannot help agains leakage, which is becoming more and more of a problem with newer processes.
You're throwing a bunch of concepts together. Not that's there anything fundamentally incorrect, but it comes out confused.
The
same piece of silicon will drastically leak less if you lower the voltage. Most of the leakage is ~ K * exp(Vgs-Vth), with Vgs the supply voltage. K is going up dramatically for some smaller high-speed process, but that's not really relevant in this discussion.
A number of techniques can reduce leakage for a given process (e.g. by using transistors with a different Vth depending on the required speed), but that's all base layer stuff. A metal spin won't help you there.
There are many ways to reduce the power consumption of a chip, but pretty much all of them deal with reducing the consumption when the chip isn't operating at 100% performance level. Very little can be done to do something about the latter, other than making changes at the architecture/design level.