http://www.amd.com/us-en/Corporate/VirtualPressRoom/0,,51_104_543~91999,00.html
SUNNYVALE, CA and EAST FISHKILL, NY -- December 13, 2004 --AMD and IBM today announced that they have developed a new and unique strained silicon transistor technology aimed at improving processor performance and power efficiency. The breakthrough process results in up to a 24 percent transistor speed increase, at the same power levels, compared to similar transistors produced without the technology.
...
The new strained silicon process, called “Dual Stress Liner,†enhances the performance of both types of semiconductor transistors, called n-channel and p-channel transistors, by stretching silicon atoms in one transistor and compressing them in the other. The dual stress liner technique works without the introduction of challenging, costly new production techniques, allowing for its rapid integration into volume manufacturing using standard tools and materials.
...
Details of the AMD-IBM Dual Stress Liner innovation will be disclosed at the 2004 IEEE International Electron Devices Meeting in San Francisco, Calif. from December 13-15, 2004. The Dual Stress Liner with SOI technology was developed by engineers from IBM, AMD, Sony and Toshiba at IBM’s Semiconductor Research and Development Center (SRDC) in East Fishkill, NY, as well as engineers from AMD at its Fab 30 facility in Dresden, Germany.