1st viable EUV patterning at the 22nm node?

[MTd2]

This seems too good to be true. I'd like to know your opinions.

"They represent the first real 22 nm resist data, building confidence for EUV as a viable technology for 22 nm half-pitch lithography"

http://www.fabtech.org/index.php?option=com_content&task=view&id=65710&Itemid=69

 

[hoom]

Wow, I have no clue what that article is saying other than something about 22nm

EUV = Extreme Ultra Violet?

 

[AlNom]

EUV = Extreme Ultra Violet?

Yup.

Resist = Photoresist chemicals, which the laser exposes to either harden or soften. In the next step, the former = remove anything not exposed, latter = remove exposed part. The remaining photoresist blocks the dopants or deposited layers. You might imagine that the removal process/etching becomes more anal as you are attempting to achieve more acute precision; on a macro scale, think of soaking a square area of a cookie and removing only that softened area with few broken bits in the hard part of the cookie.

 

[hoom]

Thanks for that

So EUV lithography is a bit 'rough' making it not yet properly practical but with advances in the resist material they are getting a better result & it may be practical soon at 22nm?