There are three major elements to microprocessor yield.
1) Defectivity based yield. Very simple - manufacturing
imperfections cause point defects like shorts or opens
in devices or interconnect. Unless it is in a structure
like SRAM that can be repaired by direct substitution of
redundant elements the device is useless. Also a dual
CPU device may be salvageable as single CPU device.
2) Parametric based yield. As process feature size falls
basic electrical characteristics of transistors become
more variable. Some circuits are sensitive to device
variation under certain operating corners and may fail.
Some percent of devices may draw excessive amounts
of leakage current. With increasing variability within a
single device of both transistors and interconnect the
use of statistical based timing closure means otherwise
functional devices may fail because of one or more hold
time failures.
3) Commercial yield. The mobile, desktop and server
MPU markets are extremely competive. Maximum power
is a crucial factor in defining commercial yield (i.e. the
fraction of all functional and parametrically acceptable
devices saleable without hurting the competitive image
of the device). The best devices that come out of the fab
combine low leakage and a high maximum clock rate
vs voltage curve. These devices are the basis of BOTH
the highest clocked SKUs within a realistic power limit
and also the lowest power SKUs at any given frequency.
Unfortunately those golden devices are relatively rare
because the processing variations that produce high
speed also tend to produce high leakage. In contrast,
devices with high leakage power (but still within spec,
or else the devices would be parametric losses) and a
low maximum clock rate vs voltage curve are the least
desirable parts. These typically sell as the slowest
SKUs in high power (desktop and server) segments.
In some cases the maximum frequency these devices
achieve while still falling within the device's spec for
maximum voltage and power may not be commercially
viable and thus are basically unusable - i.e. a form of
yield loss. Fortunately the garbage devices (leaky and
slow) are also a minority. The majority of production
falls in a continuum of low leakage/low speed to high
leakage/high speed. The trick for MPU vendors is having
designs for which it can sell even the garbage devices
(even if only in significantly discounted SKUs). OTOH
if only the golden-ish devices are attractive to buyers
then the vendor is up the creek - low commercial yield.
Up until about 10 or 15 years ago defectivity yield was
just about the entire story. Occassionally an entire wafer
batch would be excessively leaky etc and it would have
to be scrapped but that was a relatively rare event. For
small devices (100 to 150 mm2) in mature processes
it wasn't exceptional for yields to exceed 90%. Device
frequency binning was pretty much a bell curve defined
by circuit speed. Maximum power was specified for
each speed grade and was typically set so loosely that
practically every last device could meet it.
These days for most high end MPUs parametric yield
loss is probably much more significant than classic
defectivity yield loss. Maximum power specs and speed
grades are determined together to trade off dynamic
and static power variation and make the device family
as competitive as possible without giving rise to risks
of significant commercial yield loss. That is why you
now see 1) single TDP spec for a range of frequency
bins, and 2) annecdotal reports of one MPU sample
using much less power than its datasheet TDP while
another runs very close to TDP.